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? semiconductor components industries, llc, 1994 january, 2017 ? rev. 17 1 publication order number: bc846alt1/d bc846alt1g series general purpose transistors npn silicon features ? moisture sensitivity level: 1 ? esd rating ? human body model: > 4000 v esd rating ? machine model: > 400 v ? s and nsv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector-emitter voltage bc846 bc847, bc850 bc848, bc849 v ceo 65 45 30 vdc collector?base voltage bc846 bc847, bc850 bc848, bc849 v cbo 80 50 30 vdc emitter?base voltage bc846 bc847, bc850 bc848, bc849 v ebo 6.0 6.0 5.0 vdc collector current ? continuous i c 100 madc stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board, (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction?to?ambient (note 1) r ja 556 c/w total device dissipation alumina substrate (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction?to?ambient (note 2) r ja 417 c/w junction and storage temperature range t j , t stg ?55 to +150 c 1. fr? 5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in 99.5% alumina. sot?23 case 318 style 6 marking diagram 1 2 3 collector 3 1 base 2 emitter see detailed ordering and shipping information in the package dimensions section on page 12 of this data sheet. ordering information 1 xx m xx = device code m = date code* = pb?free package (note: microdot may be in either location) *date code orientation and/or overbar may vary depending upon manufacturing location. www. onsemi.com
bc846alt1g series www. onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage bc846a, b (i c = 10 ma) bc847a, b, c, bc850b, c bc848a, b, c, bc849b, c v (br)ceo 65 45 30 ? ? ? ? ? ? v collector ?emitter breakdown voltage bc846a, b (i c = 10 a, v eb = 0) bc847a, b, c bc850b, c bc848a, b, c, bc849b, c v (br)ces 80 50 30 ? ? ? ? ? ? v collector ?base breakdown voltage bc846a, b (i c = 10 a) bc847a, b, c, bc850b, c bc848a, b, c, bc849b, c v (br)cbo 80 50 30 ? ? ? ? ? ? v emitter ?base breakdown voltage bc846a, b (i e = 1.0 a) bc847a, b, c, bc850b, c bc848a, b, c, bc849b, c v (br)ebo 6.0 6.0 5.0 ? ? ? ? ? ? v collector cutoff current (v cb = 30 v) (v cb = 30 v, t a = 150 c) i cbo ? ? ? ? 15 5.0 na a on characteristics dc current gain bc846a, bc847a, bc848a (i c = 10 a, v ce = 5.0 v) bc846b, bc847b, bc848b bc847c, bc848c (i c = 2.0 ma, v ce = 5.0 v) bc 846a, bc847a, bc848a bc846b, bc847b, bc848b, bc849b, bc850b bc847c, bc848c, bc849c, bc850c h fe ? ? ? 110 200 420 90 150 270 180 290 520 ? ? ? 220 450 800 ? collector ?emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) collector ?emitter saturation voltage (i c = 100 ma, i b = 5.0 ma) v ce(sat) ? ? ? ? 0.25 0.6 v base ?emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) base ?emitter saturation voltage (i c = 100 ma, i b = 5.0 ma) v be(sat) ? ? 0.7 0.9 ? ? v base ?emitter voltage (i c = 2.0 ma, v ce = 5.0 v) base ?emitter voltage (i c = 10 ma, v ce = 5.0 v) v be(on) 580 ? 660 ? 700 770 mv small? signal characteristics current ?gain ? bandwidth product (i c = 10 ma, v ce = 5.0 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = 10 v, f = 1.0 mhz) c obo ? ? 4.5 pf noise figure (i c = 0.2 ma, v ce = 5.0 vdc, r s = 2.0 k , bc846a,b, bc847a,b,c, bc848a,b,c f = 1.0 khz, bw = 200 hz) bc849b,c, bc850b,c nf ? ? ? ? 10 4.0 db product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
bc846alt1g series www. onsemi.com 3 bc846a, bc847a, bc848a, sbc846a figure 1. dc current gain vs. collector current i c , collector current (a) 0.1 0.01 0.001 0 100 200 300 h fe , dc current gain 1 v ce = 1 v 150 c ?55 c 25 c figure 2. dc current gain vs. collector current i c , collector current (a) 0.1 0.01 0.001 0 100 200 300 h fe , dc current gain 1 v ce = 5 v 150 c ?55 c 25 c figure 3. collector emitter saturation voltage vs. collector current i c , collector current (a) 0.1 0.01 0.001 0.0001 0 0.02 0.18 figure 4. base emitter saturation voltage vs. collector current figure 5. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 v ce(sat) , collector?emitter saturation voltage (v) v be(sat) , base?emitter saturation voltage (v) v be(on) , base?emitter voltage (v) i c /i b = 20 150 c ?55 c 25 c 0.4 0.9 i c /i b = 20 150 c ?55 c 25 c 0.4 0.7 1.1 v ce = 5 v 150 c ?55 c 25 c 0.04 0.06 0.08 0.10 0.12 0.14 0.16
bc846alt1g series www. onsemi.com 4 bc846a, bc847a, bc848a, sbc846a figure 6. collector saturation region i b , base current (ma) figure 7. base?emitter temperature coefficient i c , collector current (ma) 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) 0.2 1.0 10 100 -55 c to +125 c t a = 25 c i c = 50 ma i c = 100 ma i c = 200 ma i c = 20 ma i c = 10 ma 1.0 figure 8. capacitances v r , reverse voltage (volts) 10 figure 9. current?gain ? bandwidth product i c , collector current (madc) 0.4 0.6 1.0 10 20 1.0 2.0 6.0 40 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 v ce = 10 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product (mhz) t 0.8 4.0 8.0 t a = 25 c c ob c ib
bc846alt1g series www. onsemi.com 5 bc846b, sbc846b figure 10. dc current gain vs. collector current i c , collector current (a) 0.1 0.01 0.001 0 100 200 300 400 600 h fe , dc current gain 1 v ce = 1 v 150 c ?55 c 25 c 500 figure 11. dc current gain vs. collector current i c , collector current (a) 0.1 0.01 0.001 0 100 200 300 400 600 h fe , dc current gain 1 v ce = 5 v 150 c ?55 c 25 c 500 figure 12. collector emitter saturation voltage vs. collector current i c , collector current (a) 0.1 0.01 0.001 0.0001 0 0.15 0.30 figure 13. base emitter saturation voltage vs. collector current figure 14. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 1.1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 v ce(sat) , collector?emitter saturation voltage (v) v be(sat) , base?emitter saturation voltage (v) v be(on) , base?emitter voltage (v) i c /i b = 20 150 c ?55 c 25 c 0.4 0.9 i c /i b = 20 150 c ?55 c 25 c 0.4 0.7 1.1 v ce = 5 v 150 c ?55 c 25 c 0.25 0.20 0.05 0.10
bc846alt1g series www. onsemi.com 6 bc846b, sbc846b figure 15. collector saturation region i b , base current (ma) figure 16. base?emitter temperature coefficient i c , collector current (ma) 1.0 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collector-emitter voltage (volts) vb , temperature coefficient (mv/ c) 0.2 2.0 10 200 1.0 t a = 25 c 200 ma 50 ma i c = 10 ma 0.05 0.2 0.5 2.0 5.0 100 ma 20 ma 1.4 1.8 2.2 2.6 3.0 0.5 5.0 20 50 100 -55 c to 125 c vb for v be figure 17. capacitance v r , reverse voltage (volts) 40 figure 18. current?gain ? bandwidth product i c , collector current (ma) 0.1 0.2 1.0 50 2.0 2.0 10 100 100 200 500 50 20 20 10 6.0 4.0 1.0 10 50 100 5.0 v ce = 5 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product t 0.5 5.0 20 t a = 25 c c ob c ib
bc846alt1g series www. onsemi.com 7 bc847b, bc848b, bc849b, bc850b, sbc847b, sbc848b figure 19. dc current gain vs. collector current i c , collector current (a) 0.1 0.01 0.001 0 100 200 600 h fe , dc current gain 1 v ce = 1 v 150 c ?55 c 25 c 300 400 500 figure 20. dc current gain vs. collector current i c , collector current (a) 0.1 0.01 0.001 0 100 200 600 h fe , dc current gain 1 v ce = 5 v 150 c ?55 c 25 c 300 400 500 figure 21. collector emitter saturation voltage vs. collector current i c , collector current (a) 0.1 0.01 0.001 0.0001 0 0.05 0.30 figure 22. base emitter saturation voltage vs. collector current figure 23. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 v ce(sat) , collector?emitter saturation voltage (v) v be(sat) , base?emitter saturation voltage (v) v be(on) , base?emitter voltage (v) i c /i b = 20 150 c ?55 c 25 c 0.4 0.9 i c /i b = 20 150 c ?55 c 25 c 0.4 0.7 1.1 v ce = 5 v 150 c ?55 c 25 c 0.10 0.15 0.20 0.25 1.0
bc846alt1g series www. onsemi.com 8 bc847b, bc848b, bc849b, bc850b, sbc846b, sbc847b, sbc848b figure 24. collector saturation region i b , base current (ma) figure 25. base?emitter temperature coefficient i c , collector current (ma) 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) 0.2 1.0 10 100 -55 c to +125 c t a = 25 c i c = 50 ma i c = 100 ma i c = 200 ma i c = 20 ma i c = 10 ma 1.0 figure 26. capacitances v r , reverse voltage (volts) 10 figure 27. current?gain ? bandwidth product i c , collector current (madc) 0.4 0.6 1.0 10 20 1.0 2.0 6.0 40 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 v ce = 10 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product (mhz) t 0.8 4.0 8.0 t a = 25 c c ob c ib
bc846alt1g series www. onsemi.com 9 bc847c, bc848c, bc849c, bc850c, sbc847c figure 28. dc current gain vs. collector current i c , collector current (a) 0.1 0.01 0.001 0 100 200 1000 h fe , dc current gain 1 v ce = 1 v 150 c ?55 c 25 c 300 400 500 600 700 800 900 figure 29. dc current gain vs. collector current i c , collector current (a) 0.1 0.01 0.001 0 100 200 1000 h fe , dc current gain 1 v ce = 5 v 150 c ?55 c 25 c 300 400 500 600 700 800 900 figure 30. collector emitter saturation voltage vs. collector current i c , collector current (a) 0.1 0.01 0.001 0.0001 0 0.05 0.30 figure 31. base emitter saturation voltage vs. collector current figure 32. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 v ce(sat) , collector?emitter saturation voltage (v) v be(sat) , base?emitter saturation voltage (v) v be(on) , base?emitter voltage (v) i c /i b = 20 150 c ?55 c 25 c 0.4 0.9 i c /i b = 20 150 c ?55 c 25 c 0.4 0.7 1.1 v ce = 5 v 150 c ?55 c 25 c 0.10 0.15 0.20 0.25 1.0
bc846alt1g series www. onsemi.com 10 bc847c, bc848c, bc849c, bc850c, sbc847c figure 33. collector saturation region i b , base current (ma) figure 34. base?emitter temperature coefficient i c , collector current (ma) 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) 0.2 1.0 10 100 -55 c to +125 c t a = 25 c i c = 50 ma i c = 100 ma i c = 200 ma i c = 20 ma i c = 10 ma 1.0 figure 35. capacitances v r , reverse voltage (volts) 10 figure 36. current?gain ? bandwidth product i c , collector current (madc) 0.4 0.6 1.0 10 20 1.0 2.0 6.0 40 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 v ce = 10 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product (mhz) t 0.8 4.0 8.0 t a = 25 c c ob c ib
bc846alt1g series www. onsemi.com 11 1 ms thermal limit 1 s figure 37. safe operating area for bc846a, bc846b figure 38. safe operating area for bc847a, bc847b, bc847c, bc850b, bc850c v ce , collector emitter voltage (v) v ce , collector emitter voltage (v) 100 10 1 0.001 0.01 0.1 1 100 10 1 0.1 0.001 0.01 0.1 1 figure 39. safe operating area for bc848a, bc848b, bc848c, bc849b, bc849c v ce , collector emitter voltage (v) 100 10 1 0.1 0.001 0.01 0.1 1 i c , collector current (a) i c , collector current (a) i c , collector current (a) 100 ms 10 ms 1 ms thermal limit 1 s 100 ms 10 ms 1 ms thermal limit 1 s 100 ms 10 ms
bc846alt1g series www. onsemi.com 12 ordering information device marking package shipping ? bc846alt1g 1a sot?23 (pb?free) 3,000 / tape & reel sbc846alt1g* bc846alt3g 10,000 / tape & reel bc846blt1g 1b 3,000 / tape & reel sbc846blt1g* bc846blt3g 10,000 / tape & reel sbc846blt3g* bc847alt1g 1e 3,000 / tape & reel bc847alt3g 10,000 / tape & reel bc847blt1g 1f 3,000 / tape & reel sbc847blt1g* bc847blt3g 10,000 / tape & reel nsvbc847blt3g* bc847clt1g 1g 3,000 / tape & reel sbc847clt1g* bc847clt3g 10,000 / tape & reel bc848alt1g 1j 3,000 / tape & reel bc848blt1g 1k 3,000 / tape & reel sbc848blt1g* bc848blt3g 10,000 / tape & reel bc848clt1g 1l 3,000 / tape & reel NSVBC848CLT1G* bc848clt3g 10,000 / tape & reel bc849blt1g 2b 3,000 / tape & reel nsvbc849blt1g* bc849blt3g 10,000 / tape & reel bc849clt1g 2c 3,000 / tape & reel bc849clt3g 10,000 / tape & reel bc850blt1g 2f 3,000 / tape & reel nsvbc850blt1g* bc850clt1g 2g nsvbc850clt1g* ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging spe- cifications brochure, brd8011/d. *s and nsv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualifi ed and ppap capable.
bc846alt1g series www. onsemi.com 13 package dimensions sot?23 (to?236) case 318?08 issue ar d a1 3 1 2 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of the base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. soldering footprint* view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.000 b 0.37 0.44 0.50 0.015 c 0.08 0.14 0.20 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.30 0.43 0.55 0.012 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.027 c 0 ??? 10 0 ??? 10 t t 3x top view side view end view 2.90 0.80 dimensions: millimeters 0.90 pitch 3x 3x 0.95 recommended style 6: pin 1. base 2. emitter 3. collector *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular pu rpose, nor does on semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without li mitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, regulatio ns and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semicond uctor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typicals? mus t be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the rights of others. on semiconduc tor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or si milar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, cost s, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer . this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 bc846alt1/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?

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